Patents (8)

 

1. Method of Determination of Energy Parameters of High-Resistivity Electrooptic Semiconductors

V.N. Astratov, A.V. Ilinskii, and A.S. Furman

Patent No 1833054 (In Russia), 1992

2. Method of Measurements of Carriers Drift Mobility in High-Resistivity Semiconductors

V.N. Astratov, A.S. Furman, and A.V. Ilinskii

Patent No 1604099 (in Russia), 1990

3. Method of Measurements of Electrical Parameters of High-Resistivity Semiconductors

V.N. Astratov, A.V. Ilinskii, and M.B. Melnikov

Patent No 1487754 (in Russia), 1989

4. Method of Measurements of Population of Trapping Levels in High-Resistivity Semiconductors

V.N. Astratov, A.V. Ilinskii, and M.B. Melnikov

Patent No 1468327 (in Russia), 1988

5. Method of Conductivity Measurements in High-Resistivity Semiconductors

V.N. Astratov, A.V. Ilinskii, M.B. Melnikov, S.N. Reznikov, and I.N. Hootorskoy

Patent No 1400391 (in Russia), 1988

6. Method of Measurements of Quantum Yield of Photo-Effect in High-Resistivity Semiconductors

V.N. Astratov, A.V. Ilinskii, and M.B. Melnikov

Patent No 1289322 (in Russia), 1986

7. Method of Determination of Energy of Trapping Levels in High-Resistivity Crystals

V.N. Astratov, A.V. Ilinskii, M.B. Melnikov, O.M. Rusakov, S.N. Reznikov, and L.N. Linnik

Patent No 1235408 (in Russia), 1986

8. Method of Determination of Distribution of Electric Field by Transverse Electrooptic Effect in Crystals

V.N. Astratov, A.V. Ilinskii, L.N. Linnik, and S.N. Reznikov

Patent No 1045728 (in Russia), 1983